The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Feb. 20, 2020
Applicant:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Inventors:
David C. Reusch, Blacksburg, VA (US);
Jianjun Cao, Torrance, CA (US);
Alexander Lidow, Marina Del Rey, CA (US);
Assignee:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H02M 1/08 (2006.01); H02M 3/335 (2006.01); H02M 3/158 (2006.01); H01L 29/786 (2006.01); H02M 1/42 (2007.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H01L 27/1203 (2013.01); H01L 29/78681 (2013.01); H02M 1/4225 (2013.01); H02M 3/158 (2013.01); H02M 3/33592 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/7786 (2013.01);
Abstract
An integrated circuit that includes a plurality of GaN transistor sets. A first set of the plurality of GaN transistor sets includes transistors with a first drain-to-source distance, and wherein a second of the plurality of GaN transistor sets includes transistors with a second drain-to-source distance that is greater than the first drain-to-source distance.
Reusch, David. (2021). Integrated circuit with multiple gallium nitride transistor sets (U.S. Patent No. 11050339). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11050339
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile