The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Oct. 07, 2022
Applicant:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Inventors:
Wen-Chia Liao, Torrance, CA (US);
Jianjun Cao, Torrance, CA (US);
Robert Beach, La Crescenta, CA (US);
Zhikai Tang, Torrance, CA (US);
Edward Lee, Torrance, CA (US);
Assignee:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H10D 8/01 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H10D 8/051 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01);
Abstract
A bidirectional GaN FET with a single gate formed by integrating a single-gate bidirectional GaN FET in parallel with a bidirectional device formed of two back-to-back GaN FETs with a common source. The single-gate bidirectional GaN FET occupies most of the integrated circuit die, such that the integrated device has a low channel resistance, while also capturing the advantages of a back-to-back bidirectional GaN FET device.