The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Aug. 25, 2021
Infineon Technologies Ag, Neubiberg, DE;
Ute Queitsch, Dresden, DE;
Roman Baburske, Otterfing, DE;
Ingo Dirnstorfer, Dresden, DE;
Hans-Juergen Thees, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes: a first load terminal at a first side, a second load terminal, and a semiconductor body coupled to the load terminals and configured to conduct a load current between the load terminals; and trenches at the first side and extending into the semiconductor body along a vertical direction. Each trench includes a trench electrode insulated from the semiconductor body by a trench insulator. Two trenches spatially confine a mesa portion. A semiconductor source region and semiconductor body region are in the mesa portion. A contact plug extends from the first side into the mesa portion and is arranged: in contact with the source and body regions; in contact with the trench insulator of one of the two trenches that spatially confine the mesa portion; and spaced apart from the trench insulator of the other one of the two trenches that spatially confine the mesa portion.