The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 06, 2021
Infineon Technologies Ag, Neubiberg, DE;
Thorsten Arnold, Jesenwang, DE;
Roman Baburske, Otterfing, DE;
Ilaria Imperiale, Munich, DE;
Alexander Philippou, Munich, DE;
Hans-Juergen Thees, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device first trench structures extending from a first main surface into a semiconductor body up to a first depth. The first trench structures extend in parallel along a first lateral direction. Each first trench structure includes a first dielectric and a first electrode. The power semiconductor device further includes second trench structures extending from the first main surface into the semiconductor body up to a second depth that is smaller than the first depth. The second trench structures extend in parallel along a second lateral direction and intersect the first trenches at intersection positions. Each second trench structure includes a second dielectric and a second electrode. The second dielectric is arranged between the first electrode and the second electrode at the intersection positions.