The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Mar. 02, 2023
Infineon Technologies Austria Ag, Villach, AT;
Matteo Dainese, Munich, DE;
Alim Karmous, Dresden, DE;
Christian Philipp Sandow, Haar, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Daniel Schlögl, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
An insulated gate bipolar transistor (IGBT) is proposed. The IGBT includes a semiconductor body having a first surface and a second surface. The IGBT further includes an active area and an edge termination area that at least partly surrounds the active area. The active area includes a first part of an active IGBT area and a second part of the active IGBT area. The IGBT further includes a contact on the second surface of the semiconductor body. A minimum vertical distance between the contact in the first part of the active IGBT area and a reference level at the first surface is larger than a minimum vertical distance between the contact in the second part of the active IGBT area and the reference level at the first surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile