The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jul. 21, 2023
Infineon Technologies Ag, Neubiberg, DE;
Saurabh Roy, Villach, AT;
Ravi Keshav Joshi, Klagenfurt am Wörthersee, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Bernhard Goller, Villach, AT;
Daria Krasnozhon, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
The present disclosure generally relates to a method of manufacturing a contact on a silicon carbide semiconductor substrate wherein the method comprises providing a 4H—SiC semiconductor substrate, irradiating a surface area of the 4H—SiC semiconductor substrate with a first thermal annealing laser beam, thereby generating a phase separation of the surface area comprising at least a 3C—SiC layer, and depositing a contact material onto the 3C—SiC layer to form a contact layer on the semiconductor substrate. The disclosure further relates to a silicon carbide semiconductor device with an Ohmic contact comprising a 4H—SiC semiconductor substrate, a 3C—SiC layer, and a contact layer directly in contact with the 3C—SiC layer at the semiconductor surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile