Daria Krasnozhon

Title: Daria Krasnozhon: Semiconductor Invention and Patent

Introduction

Daria Krasnozhon is an inventor associated with Villach, Austria, and Infineon Technologies AG. Her patent work concerns silicon carbide semiconductor technology, including methods for forming electrical contacts on semiconductor substrates.

Latest Patents

The provided information lists 1 patent for Daria Krasnozhon: “Method for Manufacturing a Contact on a Silicon Carbide Semiconductor Substrate, and Silicon Carbide Semiconductor Device.”

The invention describes irradiating a surface area of a 4H-SiC semiconductor substrate with a thermal annealing laser beam to generate phase separation that includes a 3C-SiC layer. Contact material is then deposited onto that layer to form a contact. The disclosure also describes a silicon carbide semiconductor device with an Ohmic contact, comprising a 4H-SiC substrate, a 3C-SiC layer, and a contact layer directly contacting the 3C-SiC layer at the semiconductor surface.

Career Highlights

Krasnozhon’s listed patent is associated with Infineon Technologies AG, a company active in semiconductor technology. The invention focuses on a manufacturing approach for semiconductor contacts and a device structure using silicon carbide.

Collaborations

The provided information identifies Saurabh Roy as a coworker. No further details about their collaboration on the patent are included.

Conclusion

Daria Krasnozhon’s listed invention addresses contact formation in silicon carbide semiconductors, combining laser-induced surface phase separation with a device structure designed around a 3C-SiC layer.