The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Dec. 01, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Saurabh Roy, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Oliver Blank, Villach, AT;
Josef Anton Moser, Sattendorf, AT;
Thomas Aichinger, Faak am See, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H10D 30/668 (2025.01); H10D 62/235 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01);
Abstract
A power transistor device includes a semiconductor substrate, a gate trench extending into the semiconductor substrate, a transistor gate provided in the gate trench, and an insulating structure formed between the transistor gate and a side wall of the gate trench. The insulating structure is configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench. The insulating structure includes a layer of piezoelectric material.