The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Mar. 17, 2021
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Anton Mauder, Kolbermoor, DE;
Mario Barusic, Seebogen, AT;
Markus Beninger-Bina, Grosshelfendorf, DE;
Matteo Dainese, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 21/2658 (2013.01); H01L 21/26513 (2013.01); H01L 29/0688 (2013.01); H01L 29/32 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01);
Abstract
A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body; and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.