The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
May. 10, 2019
Infineon Technologies Ag, Neubiberg, DE;
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Matteo Dainese, Villach, AT;
Alexander Philippou, Munich, DE;
Markus Bina, Grosshelfendorf, DE;
Ingo Dirnstorfer, Dresden, DE;
Erich Griebl, Dorfen, DE;
Christian Jaeger, Munich, DE;
Johannes Georg Laven, Taufkirchen, DE;
Caspar Leendertz, Munich, DE;
Frank Dieter Pfirsch, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.