logo

For the Inventor, By the Inventor

Sauerlach, Germany

Markus Bina

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Power Semiconductors. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag, Infineon Technologies Dresden Gmbh & Co . Kg. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Markus Bina. Retrieved from https://idiyas.com/inventor/markus-bina

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Grosshelfendorf, DE (2019 - 2021)
  • Sauerlach, DE (2018 - 2022)
  • Kolbermoor, DE (2020 - 2024)

Company Filing History:

goldMedal11 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal9 out of 2,211 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal1 out of 61 
 
Infineon Technologies Dresden Gmbh & Co . Kg
 patents
where one patent can have more than one assignee

Years Active: 2018-2026

Loading Chart...
Areas of Expertise:
Double Gate Transistor
Power Semiconductor Device
Neutron Transmutation Doping
IGBT
dV/dt Controllability
N-Channel Bipolar Device
Cross-Trench Arrangement
Current Measurement
Barrier Region
Transistor Cell Units
Manufacturing Method
20 patents (USPTO):Explore Patents
1. 12671412 - Double gate transistor device and method of operating (2026-06-30),
2. 12003231 - Double gate transistor device and method of operating (2024-06-04),
3. 11250966 - Apparatus and method for neutron transmutation doping of semiconductor wafers (2022-02-15),
4. 11075290 - Power semiconductor device having a cross-trench arrangement (2021-07-27),
5. 10978596 - Power diode and method of manufacturing a power diode (2021-04-13),
6. 10923578 - Semiconductor device comprising a barrier region (2021-02-16),
7. 10903353 - Double gate transistor device and method of operating (2021-01-26),
8. 10840362 - IGBT with dV/dt controllability (2020-11-17),
9. 10644141 - Power semiconductor device with dV/dt controllability (2020-05-05),
10. 10615272 - Method for producing IGBT with dV/dt controllability (2020-04-07),
11. 10546939 - N-channel bipolar power semiconductor device with P-layer in the drift volume (2020-01-28),
12. 10530360 - Double gate transistor device and method of operating (2020-01-07),
13. 10468148 - Apparatus and method for neutron transmutation doping of semiconductor wafers (2019-11-05),
14. 10355116 - Power semiconductor device (2019-07-16),
15. 10332973 - N-channel bipolar power semiconductor device with p-layer in the drift volume (2019-06-25),

Title: The Innovative Journey of Markus Bina

Introduction: Markus Bina, a talented inventor hailing from Sauerlach, Germany, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Markus Bina holds several patents in the areas of renewable energy technologies and sustainable solutions. His most recent patent focuses on a revolutionary method for harnessing solar energy more efficiently.

Career Highlights: Throughout his career, Markus Bina has demonstrated a keen ability to identify gaps in the market and develop innovative solutions to address them. His work has not only earned him recognition within the industry but has also positively impacted the lives of many through his inventions.

Collaborations: Markus Bina has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation and driving progress in the field.

Conclusion: Markus Bina's passion for innovation and commitment to creating a sustainable future have solidified his position as a respected inventor in the industry. His relentless pursuit of excellence continues to inspire others to think outside the box and strive for groundbreaking solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…