The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Dec. 20, 2019
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
INFINEON TECHNOLOGIES AUSTRIA AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/567 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/76 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H01L 29/0895 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/7606 (2013.01); H01L 29/7786 (2013.01); H01L 29/7788 (2013.01); H01L 29/7813 (2013.01); H01L 29/7831 (2013.01); H03K 17/687 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H03K 2017/6878 (2013.01);
Abstract
In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.