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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10355116 B1

PDFFull Text
Date of Patent:
Jul. 16, 2019

Filed:

Mar. 20, 2018

Power semiconductor device

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Markus Bina, Grosshelfendorf, DE;

Thomas Basler, Riemerling, DE;

Matteo Dainese, Villach, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies Austria AG, , AT;

Attorney:

Design IP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/74 (2006.01); H01L 29/73 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/80 (2006.01); H01L 29/86 (2006.01); H01L 27/02 (2006.01); H01L 27/07 (2006.01); H01L 29/739 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 27/0255 (2013.01); H01L 27/0727 (2013.01); H01L 29/04 (2013.01); H01L 29/083 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/423 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/8083 (2013.01); H01L 29/861 (2013.01); H01L 29/0834 (2013.01); H01L 29/16 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01); H01L 29/7398 (2013.01); H01L 29/7428 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A power semiconductor device includes: a semiconductor body coupled to a first load terminal and a second load terminal, and includes: a first doped region of a second conductivity type electrically connected to the first load terminal; a recombination zone arranged at least within the first doped region; an emitter region of the second conductivity type electrically connected to the second load terminal; and a drift region of a first conductivity type arranged between the first doped region and the emitter region. The drift region and the first doped region enable the power semiconductor device to operate in: a conducting state during which a load current between the load terminals is conducted along a forward direction; in a forward blocking state during which a forward voltage applied between the load terminals is blocked; and in a reverse blocking state during which a reverse voltage applied between the terminals is blocked.

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