The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Nov. 25, 2020
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
Described herein is a power semiconductor device and corresponding method of production. The semiconductor device includes: a power device region formed in a semiconductor substrate and including first trenches and second trenches extending lengthwise in parallel with one another with semiconductor mesas between adjacent ones of the trenches, each first trench including a gate electrode at a first potential and each second trench including a field plate at a second potential; and a current sense region formed in the semiconductor substrate. A subset of the first trenches, a subset of the second trenches and a subset of the semiconductor mesas are common to both the current sense region and the power device region. The second trenches are interrupted along opposite first and second sides of the current sense region such that the field plates are interrupted between the power device region and the current sense region.