The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Mar. 28, 2019
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Matteo Dainese, Villach, AT;
Markus Beninger-Bina, Grosshelfendorf, DE;
Alexander Philippou, Munich, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/765 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/765 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A power transistor having a semiconductor barrier region is presented. A power unit cell of the power transistor has at least two trenches that may both extend into the semiconductor barrier region. The semiconductor barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The semiconductor barrier region can be electrically floating. Further, the at least two trenches may both increase in width along their respective extension into the semiconductor body.