The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jul. 13, 2021
Infineon Technologies Ag, Neubiberg, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Juergen Thees, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes: a semiconductor body with a drift region; a plurality of trenches, wherein two adjacent trenches laterally confine a mesa of the semiconductor body. Each trench extends along a vertical direction and includes a trench electrode, and has a trench width along a first lateral direction and a trench length along a second lateral direction perpendicular to the first lateral direction, the trench length amounting to at least five times the trench width. The device further includes: a semiconductor body region of a second conductivity type in the mesa; a source region in the mesa; an insulation layer above and/or on the source region; a contact plug that extends at least from an upper surface of the insulation layer along the vertical direction so as to contact both the source region and the semiconductor body region.