The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Aug. 20, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Hans-Juergen Thees, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 21/266 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6634 (2013.01); H01L 21/0217 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract

An auxiliary layer is formed above a semiconductor body surface of a semiconductor body, the auxiliary layer being coupled to the semiconductor body and having an auxiliary layer surface. Trenches extend from the auxiliary layer surface along a vertical direction through the auxiliary layer into the semiconductor body, wherein two facing trench sidewalls of two adjacent trenches laterally confine a mesa region of the semiconductor body along a first lateral direction, each adjacent trench including a trench section protruding out of the semiconductor body surface. The trenches are filled with a trench filler material which is planarized to expose the auxiliary layer. The auxiliary layer is removed to least partially while maintaining the protruding trench sections. The mesa region is subjected to an implantation tilted by an angle of at least 10°, the protruding trench sections of the adjacent trenches serving at least partially as a mask during the implantation.


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