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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923579 B1

PDFFull Text
Date of Patent:
Feb. 16, 2021

Filed:

Apr. 21, 2020

Semiconductor device with interconnect to source/drain

Applicant:

Globalfoundries U.s. Inc., Grand Cayman, KY;

Inventors:

Hans-Juergen Thees, Dresden, DE;

Peter Baars, Dresden, DE;

Elliot John Smith, Dresden, DE;

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:

Francois Pagette

Hoffman Warnick LLC

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/285 (2006.01); H01L 27/12 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66772 (2013.01); H01L 21/28587 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 27/1211 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/66818 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); H01L 21/76283 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01);
Abstract

A device including an SOI substrate and an isolation structure positioned at least partially in a trench that extends through a buried insulation layer and into a semiconductor bulk substrate of the SOI substrate is disclosed. The isolation structure includes a first dielectric layer positioned in a lower portion of the trench, a first material layer positioned above the first dielectric layer, the first material layer having a material different from a material of the first dielectric layer, and a second dielectric layer positioned above the first material layer, the second dielectric layer having a material different from the material of the first material layer.

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