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For the Inventor, By the Inventor

Dresden, Germany

Elliot John Smith

USPTO Granted Patents = 29 

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 451(Granted Patents)


Location History:

  • Carpinteria, CA (US) (2020)
  • Santa Barbara, CA (US) (2020)
  • Dresden, DE (2016 - 2021)

Company Filing History:

goldMedal27 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2016-2021

where 'Filed Patents' based on already Granted Patents

29 patents (USPTO):
1. 11031406 - Semiconductor devices having silicon/germanium active regions with different germanium concentrations (2021-06-08),
2. 10923579 - Semiconductor device with interconnect to source/drain (2021-02-16),
3. 10811433 - High-voltage transistor device with thick gate insulation layers (2020-10-20),
4. 10707330 - Semiconductor device with interconnect to source/drain (2020-07-07),
5. 10593674 - Deep fence isolation for logic cells (2020-03-17),
6. 10559490 - Dual-depth STI cavity extension and method of production thereof (2020-02-11),
7. 10522555 - Semiconductor devices including Si/Ge active regions with different Ge concentrations (2019-12-31),
8. 10483154 - Front-end-of-line device structure and method of forming such a front-end-of-line device structure (2019-11-19),
9. 10418380 - High-voltage transistor device with thick gate insulation layers (2019-09-17),
10. 10396084 - Semiconductor devices including self-aligned active regions for planar transistor architecture (2019-08-27),
11. 10340359 - Gate structure with dual width electrode layer (2019-07-02),
12. 10319827 - High voltage transistor using buried insulating layer as gate dielectric (2019-06-11),
13. 10304683 - Early gate silicidation in transistor elements (2019-05-28),
14. 10283365 - Technique and related semiconductor devices based on crystalline semiconductor material formed on the basis of deposited amorphous semiconductor material (2019-05-07),
15. 10199259 - Technique for defining active regions of semiconductor devices with reduced lithography effort (2019-02-05),

Title: Elliot John Smith: Innovator in Semiconductor Technology

Introduction

Elliot John Smith, based in Dresden, Germany, is a prolific inventor with an impressive portfolio of 29 patents in the field of semiconductor technology. His work primarily focuses on advancements in semiconductor devices, contributing significantly to the industry.

Latest Patents

Among his latest innovations, Smith has developed several notable patents. One of which involves semiconductor devices that incorporate silicon/germanium active regions with varying germanium concentrations. This patent describes a semiconductor device featuring a first transistor element with a first channel region, and a second transistor element with a second channel region, where the germanium concentration in the first channel is lower than in the second.

Another patent details a semiconductor device with an interconnect to the source/drain. This advanced device is built on a silicon-on-insulator (SOI) substrate and comprises an isolation structure that is partially located in a trench, which extends through a buried insulation layer and into the bulk substrate. The unique layering of dielectric materials in this patent aims to enhance device performance and reliability.

Career Highlights

Elliot John Smith has made significant contributions during his tenure at prominent companies like Globalfoundries Inc. and Globalfoundries U.S. Inc. His expertise and innovative mindset have allowed him to spearhead numerous projects, focusing on cutting-edge semiconductor technologies.

Collaborations

Throughout his career, Smith has collaborated with several distinguished professionals, including colleagues Nigel Chan and Jan Hoentschel. These collaborations have fostered a dynamic exchange of ideas, leading to innovative solutions in semiconductor development.

Conclusion

Elliot John Smith's extensive patent portfolio and his collaboration with industry experts underline his importance in the semiconductor sector. His inventions continue to pave the way for technological advancements, solidifying his role as a key innovator in this ever-evolving field.

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