The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
May. 20, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1108 (2013.01); H01L 27/1116 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/31111 (2013.01);
Abstract
A semiconductor device includes a first transistor element having a first channel region and a second transistor element having a second channel region, wherein the first channel region includes a first crystalline silicon/germanium (Si/Ge) material mixture having a first germanium concentration, and wherein the second channel region includes a second crystalline Si/Ge material mixture having a second germanium concentration that is higher than the first germanium concentration.