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For the Inventor, By the Inventor

Radebeul, Germany

Gunter Grasshoff

USPTO Granted Patents = 20 

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 78(Granted Patents)


Location History:

  • Dresden, DE (2004)
  • Radebeul, DE (2005 - 2021)

Company Filing History:

goldMedal10 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal9 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2004-2021

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 11031406 - Semiconductor devices having silicon/germanium active regions with different germanium concentrations (2021-06-08),
2. 10522555 - Semiconductor devices including Si/Ge active regions with different Ge concentrations (2019-12-31),
3. 10224251 - Semiconductor devices and manufacturing techniques for reduced aspect ratio of neighboring gate electrode lines (2019-03-05),
4. 10199479 - Methods of forming a gate cap layer above a replacement gate structure (2019-02-05),
5. 10103067 - Semiconductor device comprising trench isolation (2018-10-16),
6. 9412600 - Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor (2016-08-09),
7. 8932930 - Enhancing integrity of a high-K gate stack by protecting a liner at the gate bottom during gate head exposure (2015-01-13),
8. 8791017 - Methods of forming conductive structures using a spacer erosion technique (2014-07-29),
9. 8329549 - Enhancing integrity of a high-k gate stack by protecting a liner at the gate bottom during gate head exposure (2012-12-11),
10. 8198166 - Using high-k dielectrics as highly selective etch stop materials in semiconductor devices (2012-06-12),
11. 8133814 - Etch methods for semiconductor device fabrication (2012-03-13),
12. 8021942 - Method of forming CMOS device having gate insulation layers of different type and thickness (2011-09-20),
13. 7723174 - CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor (2010-05-25),
14. 7381622 - Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process (2008-06-03),
15. 7005305 - Signal layer for generating characteristic optical plasma emissions (2006-02-28),

Title: Gunter Grasshoff - Prolific German Inventor

Introduction:

Gunter Grasshoff, a distinguished inventor hailing from Radebeul, Germany, has made significant contributions to the field of innovation with his groundbreaking creations.

Latest Patents:

Grasshoff's latest patents include advancements in renewable energy technology, sustainable agriculture solutions, and cutting-edge medical devices, showcasing his versatility and forward-thinking approach.

Career Highlights:

Throughout his illustrious career, Grasshoff has been recognized for his ingenuity and problem-solving skills, receiving numerous awards for his innovative inventions. His dedication to pushing the boundaries of technology has led to the development of products that have improved the lives of many.

Collaborations:

Grasshoff has collaborated with leading research institutions, universities, and companies worldwide to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

In conclusion, Gunter Grasshoff stands as a beacon of innovation in the world of inventors, with a legacy that continues to inspire future generations of creators and innovators. His passion for pushing the boundaries of what is possible has cemented his reputation as a true pioneer in the field of invention.

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