The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jun. 08, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/161 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/0217 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76283 (2013.01); H01L 21/823878 (2013.01); H01L 29/161 (2013.01); H01L 29/7847 (2013.01);
Abstract
A method of manufacturing a trench isolation of a semiconductor device is provided including providing a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer, forming a trench through the semiconductor layer and extending at least partially into the buried oxide layer, forming a liner at sidewalls of the trench, deepening the trench into the semiconductor bulk substrate, filling the deepened trench with a flowable dielectric material, and performing an anneal of the flowable dielectric material.