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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103067 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Jun. 08, 2017

Semiconductor device comprising trench isolation

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Peter Baars, Dresden, DE;

Gunter Grasshoff, Radebeul, DE;

Rico Hueselitz, Goeda, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Jack Chen

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/161 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/0217 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76283 (2013.01); H01L 21/823878 (2013.01); H01L 29/161 (2013.01); H01L 29/7847 (2013.01);
Abstract

A method of manufacturing a trench isolation of a semiconductor device is provided including providing a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer, forming a trench through the semiconductor layer and extending at least partially into the buried oxide layer, forming a liner at sidewalls of the trench, deepening the trench into the semiconductor bulk substrate, filling the deepened trench with a flowable dielectric material, and performing an anneal of the flowable dielectric material.

Find Patent Forward Citations

Baars, Peter. (2018). Semiconductor device comprising trench isolation (U.S. Patent No. 10103067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10103067

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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