This inventor holds 2 USPTO granted patents. Top assignee: Globalfoundries Inc.. Active years: 2013-2018.
Company Filing History:
Years Active: 2013-2018
Title: The Innovations of Rico Hueselitz
Introduction
Rico Hueselitz is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on enhancing the efficiency and effectiveness of semiconductor devices.
Latest Patents
Hueselitz's latest patents include a semiconductor device comprising trench isolation. This patent outlines a method of manufacturing trench isolation in a semiconductor device, which involves using a silicon-on-insulator (SOI) substrate. The process includes forming a trench through the semiconductor layer and extending it into the buried oxide layer, followed by filling the trench with a flowable dielectric material and performing an anneal.
Another significant patent is related to the planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry. This innovation addresses complex chemical mechanical planarization (CMP) processes that require the removal of different dielectric materials. The adaptability of the slurry material at the point of use allows for a highly dynamic adjustment of removal conditions.
Career Highlights
Rico Hueselitz is currently employed at Globalfoundries Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced manufacturing techniques that enhance device performance.
Collaborations
Hueselitz has collaborated with notable colleagues such as Peter Baars and Gunter Grasshoff. These partnerships have fostered an environment of innovation and creativity, leading to groundbreaking advancements in their field.
Conclusion
Rico Hueselitz's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of more efficient semiconductor devices.
