The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Mar. 17, 2008
Applicants:

Andy Wei, Dresden, DE;

Andrew Waite, Dresden, DE;

Martin Trentzsch, Dresden, DE;

Johannes Groschopf, Roederland, DE;

Gunter Grasshoff, Radebeul, DE;

Andreas Ott, Dresden, DE;

Inventors:

Andy Wei, Dresden, DE;

Andrew Waite, Dresden, DE;

Martin Trentzsch, Dresden, DE;

Johannes Groschopf, Roederland, DE;

Gunter Grasshoff, Radebeul, DE;

Andreas Ott, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/70 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the process sequence for replacing conventional gate electrode structures by high-k metal gate structures, the number of additional masking steps may be maintained at a low level, for instance by using highly selective etch steps, thereby maintaining a high degree of compatibility with conventional CMOS techniques. Furthermore, the techniques disclosed herein enable compatibility to front-end process techniques and back-end process techniques, thereby allowing the integration of well-established strain-inducing mechanisms in the transistor level as well as in the contact level.


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