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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Andrew Michael Waite

USPTO Granted Patents = 21 


Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 724(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2007 - 2008)
  • Radebeul/Dresden, DE (2009 - 2012)
  • Hopeful Junction, NY (US) (2009 - 2012)
  • Dresden, DE (2011 - 2012)
  • Hopewell Junction, NY (US) (2005 - 2014)

Company Filing History:

goldMedal14 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 164,108 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2005-2014

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21 patents (USPTO):
1. 8742513 - Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure (2014-06-03),
2. 8298885 - Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure (2012-10-30),
3. 8193592 - MOSFET with asymmetrical extension implant (2012-06-05),
4. 8183101 - Multiple gate transistor having fins with a length defined by the gate electrode (2012-05-22),
5. 8159030 - Strained MOS device and methods for its fabrication (2012-04-17),
6. 8148214 - Stressed field effect transistor and methods for its fabrication (2012-04-03),
7. 8124473 - Strain enhanced semiconductor devices and methods for their fabrication (2012-02-28),
8. 8021942 - Method of forming CMOS device having gate insulation layers of different type and thickness (2011-09-20),
9. 7977180 - Methods for fabricating stressed MOS devices (2011-07-12),
10. 7829401 - MOSFET with asymmetrical extension implant (2010-11-09),
11. 7723174 - CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor (2010-05-25),
12. 7659172 - Structure and method for reducing miller capacitance in field effect transistors (2010-02-09),
13. 7521380 - Methods for fabricating a stress enhanced semiconductor device having narrow pitch and wide pitch transistors (2009-04-21),
14. 7504301 - Stressed field effect transistor and methods for its fabrication (2009-03-17),
15. 7422956 - Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers (2008-09-09),

Title: Innovations by Andrew Michael Waite: A Leader in Semiconductor Technologies

Introduction

Andrew Michael Waite, based in Wappingers Falls, NY, is a renowned inventor in the semiconductor industry, with an impressive portfolio of 21 patents. His innovative contributions focus on enhancing semiconductor device performance and efficiency, significantly impacting next-generation technologies.

Latest Patents

Among his recent innovations is a patented semiconductor device that comprises metal gates and a silicon-containing resistor formed on an isolation structure. This invention utilizes sophisticated high-k metal gate structures crafted via a replacement gate approach. The design allows semiconductor-based resistors to be positioned above isolation structures without the detrimental effects commonly associated with traditional replacement gate strategies. This advancement not only improves area efficiency but also minimizes parasitic capacitance, marking a significant leap over conventional methods.

Career Highlights

Throughout his career, Andrew has contributed to leading companies in the tech industry, including Advanced Micro Devices Corporation and Globalfoundries Inc. His experience in these organizations has fostered his expertise and allowed him to push the boundaries of semiconductor design and functionality.

Collaborations

Andrew has worked alongside esteemed colleagues such as Scott D. Luning and Andy C. Wei, fostering a collaborative environment that fuels innovation and accelerates the development of groundbreaking semiconductor technologies.

Conclusion

Andrew Michael Waite’s impressive body of work and innovative spirit have made him a key figure in the field of semiconductor technology. His patents not only showcase his expertise but also reflect his commitment to advancing the industry, ultimately contributing to the development of more efficient and powerful semiconductor devices.

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