The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

Apr. 12, 2007
Applicants:

James N. Pan, West Jordan, UT (US);

Sey-ping Sun, Poughkeepsie, NY (US);

Andrew M. Waite, Radebeul/Dresden, DE;

Inventors:

James N. Pan, West Jordan, UT (US);

Sey-Ping Sun, Poughkeepsie, NY (US);

Andrew M. Waite, Radebeul/Dresden, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A strain enhanced semiconductor device and methods for its fabrication are provided. One method comprises embedding a strain inducing semiconductor material in the source and drain regions of the device to induce a strain in the device channel. Thin metal silicide contacts are formed to the source and drain regions so as not to relieve the induced strain. A layer of conductive material is selectively deposited in contact with the thin metal silicide contacts, and metallized contacts are formed to the conductive material.


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