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For the Inventor, By the Inventor

Fishkill, NY, United States of America

James N Pan

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 2.0

ph-index = 18

Forward Citations = 1,049(Granted Patents)

Forward Citations (Not Self Cited) = 1,035(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Santa Clara, CA (US) (2004 - 2006)
  • Fishkill, NY (US) (2004 - 2010)
  • Hopewell Junction, NY (US) (2011 - 2014)
  • Costa Mesa, CA (US) (2014)
  • West Jordan, UT (US) (2010 - 2015)

Company Filing History:

goldMedal37 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal17 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
bronzeMedal2 out of 164,108 
 
International Business Machines Corporation
 patents
4. 2 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 23 
 
Advanced Micro Device, Inc.
 patents
6. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2015

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60 patents (USPTO):
1. 9224853 - Shielded gate trench FET with multiple channels (2015-12-29),
2. 8815744 - Technique for controlling trench profile in semiconductor structures (2014-08-26),
3. 8772868 - Superjunction structures for power devices and methods of manufacture (2014-07-08),
4. 8753943 - Replacement metal gate transistors with reduced gate oxide leakage (2014-06-17),
5. 8669623 - Structure related to a thick bottom dielectric (TBD) for trench-gate devices (2014-03-11),
6. 8541840 - Structure and method for semiconductor power devices (2013-09-24),
7. 8445975 - Replacement metal gate transistors with reduced gate oxide leakage (2013-05-21),
8. 8329538 - Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein (2012-12-11),
9. 8278702 - High density trench field effect transistor (2012-10-02),
10. 8278686 - Structure and method for forming planar gate field effect transistor with low resistance channel region (2012-10-02),
11. 8253194 - Structures for reducing dopant out-diffusion from implant regions in power devices (2012-08-28),
12. 8124473 - Strain enhanced semiconductor devices and methods for their fabrication (2012-02-28),
13. 8097500 - Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device (2012-01-17),
14. 8084795 - Resonant cavity complementary optoelectronic transistors (2011-12-27),
15. 8053849 - Replacement metal gate transistors with reduced gate oxide leakage (2011-11-08),

Of course! Here is the article about inventor James N Pan:

Title: Innovator Spotlight: James N Pan, Prolific Inventor from Fishkill, NY

Introduction:

James N Pan, a distinguished inventor hailing from Fishkill, NY, has made significant contributions to the realm of semiconductor technology. With an impressive portfolio of 60 patents, his innovative work has left a lasting impact on the field.

Latest Patents:

Among his latest patents is the "Shielded gate trench FET with multiple channels", an apparatus designed to enhance semiconductor performance through intricate channel configurations and precise well regions. Additionally, his "Technique for controlling trench profile in semiconductor structures" showcases his expertise in optimizing trench formation for semiconductor applications.

Career Highlights:

During his career, James N Pan has been associated with renowned companies such as Advanced Micro Devices (AMD) and Fairchild Semiconductor Corporation. Through these collaborations, he has been at the forefront of cutting-edge technological advancements in the semiconductor industry.

Collaborations:

Working alongside accomplished peers like Qi Xiang and Jung-Suk Goo, James N Pan has fostered a culture of innovation and excellence. His collaborative efforts have led to the development of groundbreaking solutions that have reshaped the semiconductor landscape.

Conclusion:

In conclusion, James N Pan stands out as a visionary inventor whose inventive spirit has propelled the semiconductor industry forward. His relentless pursuit of excellence and commitment to innovation continue to inspire awe and admiration in the world of technology.

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