James N Pan

This inventor holds 60 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Advanced Micro Devices Corporation, Fairchild Semiconductor Corporation, Globalfoundries Inc.. Active years: 2004-2015.

USPTO Granted Patents = 60 (Patent Applications = 2)

% Patents Active = 78.3

EPO Patents = 4 (Patent Applications = 2)

Average Co-Inventor Count = 2.0

ph-index = 18

Forward Citations = 1,052(Granted Patents)

Forward Citations (Not Self Cited) = 1,035(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Santa Clara, CA (US) (2004 - 2006)
Fishkill, NY (US) (2004 - 2010)
Hopewell Junction, NY (US) (2011 - 2014)
Costa Mesa, CA (US) (2014)
West Jordan, UT (US) (2010 - 2015)

Company Filing History:

37 out of 13,146

Advanced Micro Devices Corporation

patents

17 out of 1,302

Fairchild Semiconductor Corporation

International Business Machines Corporation

patents

5. 1 out of 24

Advanced Micro Device, Inc.

patents

6. 2 out of 834,307

Other

patents

where one patent can have more than one assignee

Years Active: 2004-2015

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Areas of Expertise:

Trench FET

Power Devices

Low-Resistance Channel

Metal Gate Transistors

Superjunction Structures

Strain Enhanced Devices

Integrated Circuits

Multi-Channel Transistors

High-Density FET

Tunable Hot Carrier

Silicon-On-Insulator

FinFET

60 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9224853 - Shielded gate trench FET with multiple channels (2015-12-29),

2. 8815744 - Technique for controlling trench profile in semiconductor structures (2014-08-26),

3. 8772868 - Superjunction structures for power devices and methods of manufacture (2014-07-08),

4. 8753943 - Replacement metal gate transistors with reduced gate oxide leakage (2014-06-17),

5. 8669623 - Structure related to a thick bottom dielectric (TBD) for trench-gate devices (2014-03-11),

6. 8541840 - Structure and method for semiconductor power devices (2013-09-24),

7. 8445975 - Replacement metal gate transistors with reduced gate oxide leakage (2013-05-21),

8. 8329538 - Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein (2012-12-11),

9. 8278702 - High density trench field effect transistor (2012-10-02),

10. 8278686 - Structure and method for forming planar gate field effect transistor with low resistance channel region (2012-10-02),

11. 8253194 - Structures for reducing dopant out-diffusion from implant regions in power devices (2012-08-28),

12. 8124473 - Strain enhanced semiconductor devices and methods for their fabrication (2012-02-28),

13. 8097500 - Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device (2012-01-17),

14. 8084795 - Resonant cavity complementary optoelectronic transistors (2011-12-27),

15. 8053849 - Replacement metal gate transistors with reduced gate oxide leakage (2011-11-08),

Of course! Here is the article about inventor James N Pan:

Title: Innovator Spotlight: James N Pan, Prolific Inventor from Fishkill, NY

Introduction:

James N Pan, a distinguished inventor hailing from Fishkill, NY, has made significant contributions to the realm of semiconductor technology. With an impressive portfolio of 60 patents, his innovative work has left a lasting impact on the field.

Latest Patents:

Among his latest patents is the "Shielded gate trench FET with multiple channels", an apparatus designed to enhance semiconductor performance through intricate channel configurations and precise well regions. Additionally, his "Technique for controlling trench profile in semiconductor structures" showcases his expertise in optimizing trench formation for semiconductor applications.

Career Highlights:

During his career, James N Pan has been associated with renowned companies such as Advanced Micro Devices (AMD) and Fairchild Semiconductor Corporation. Through these collaborations, he has been at the forefront of cutting-edge technological advancements in the semiconductor industry.

Collaborations:

Working alongside accomplished peers like Qi Xiang and Jung-Suk Goo, James N Pan has fostered a culture of innovation and excellence. His collaborative efforts have led to the development of groundbreaking solutions that have reshaped the semiconductor landscape.

Conclusion:

In conclusion, James N Pan stands out as a visionary inventor whose inventive spirit has propelled the semiconductor industry forward. His relentless pursuit of excellence and commitment to innovation continue to inspire awe and admiration in the world of technology.

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