The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Apr. 24, 2008
Hui Chen, South Jordan, UT (US);
Qi Wang, Sandy, UT (US);
Briant Harward, West Jordan, UT (US);
James Pan, West Jordan, UT (US);
Hui Chen, South Jordan, UT (US);
Qi Wang, Sandy, UT (US);
Briant Harward, West Jordan, UT (US);
James Pan, West Jordan, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method for forming a semiconductor structure includes the following steps. Trenches are formed in a semiconductor region using a masking layer such that the trenches have a first depth, a first width along their bottom, and sidewalls having a first slope. The masking layer is removed, and a bevel etch is performed to taper the sidewalls of the trenches so that the sidewalls have a second slope less than the first slope.