The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jan. 14, 2008
Takashi Ando, Yokohama, JP;
Eduard A. Cartier, New York, NY (US);
Changhwan Choi, Yorktown Heights, NY (US);
Elizabeth A. Duch, Carmel, NY (US);
Bruce B. Doris, Brewster, NY (US);
Young-hee Kim, Mohegan Lake, NY (US);
Vijay Narayanan, New York, NY (US);
James Pan, West Jordan, UT (US);
Vamsi K. Paruchuri, Albany, NY (US);
Takashi Ando, Yokohama, JP;
Eduard A. Cartier, New York, NY (US);
Changhwan Choi, Yorktown Heights, NY (US);
Elizabeth A. Duch, Carmel, NY (US);
Bruce B. Doris, Brewster, NY (US);
Young-Hee Kim, Mohegan Lake, NY (US);
Vijay Narayanan, New York, NY (US);
James Pan, West Jordan, UT (US);
Vamsi K. Paruchuri, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor device using a gate first process, and fabricating a p-type metal-oxide-semiconductor device using a gate last process.