The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Apr. 27, 2011
Joseph A. Yedinak, Mountain Top, PA (US);
Mark L. Rinehimer, Mountain Top, PA (US);
Praveen Muraleedharan Shenoy, Kochi, ID;
Hamza Yilmaz, Saratoga, CA (US);
James Pan, Costa Mesa, CA (US);
Rodney S. Ridley, Sr., Quakertown, PA (US);
Joseph A. Yedinak, Mountain Top, PA (US);
Mark L. Rinehimer, Mountain Top, PA (US);
Praveen Muraleedharan Shenoy, Kochi, ID;
Hamza Yilmaz, Saratoga, CA (US);
James Pan, Costa Mesa, CA (US);
Rodney S. Ridley, Sr., Quakertown, PA (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
A power device includes a semiconductor substrate having a plurality of alternately arranged pillars of first and second conductivity types. At least one of the plurality of pillars of second conductivity type includes a first trench epitaxial layer of the second conductivity type disposed on a trench sidewall of the second trench and a trench bottom surface of the second trench, a second trench epitaxial layer of the second conductivity type disposed on the first trench epitaxial layer of the second conductivity type, and an insulating material layer disposed on the second trench epitaxial layer of the second conductivity type.