The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Sep. 16, 2008
James Pan, West Jordan, UT (US);
Scott L. Hunt, West Jordan, UT (US);
Dean E. Probst, West Jordan, UT (US);
Hossein Paravi, Sandy, UT (US);
James Pan, West Jordan, UT (US);
Scott L. Hunt, West Jordan, UT (US);
Dean E. Probst, West Jordan, UT (US);
Hossein Paravi, Sandy, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity type are in the well regions. Heavy body regions of the first conductivity type are in the well regions. The source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls to a top surface of the mesa regions.