West Jordan, UT, United States of America

Dean E Probst

This inventor holds 67 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in Power Semiconductors (CPC class H01L). Top assignees: Fairchild Semiconductor Corporation, Semiconductor Components Industries, LLC, Moxtek, Inc.. Active years: 2002-2026.

USPTO Granted Patents = 67 (Patent Applications = 7)

% Patents Active = 86.6

EPO Patents = 1 (Patent Applications = 6)

Average Co-Inventor Count = 3.7

ph-index = 17

Forward Citations = 1,241(Granted Patents)

Forward Citations (Not Self Cited) = 1,028(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

45 out of 1,302

Fairchild Semiconductor Corporation

patents

16 out of 3,712

Semiconductor Components Industries, LLC

Years Active: 2002-2026

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Areas of Expertise:

Power Transistors

Resonant Clamping Circuits

Trench MOSFET

Charge Storage Component

Reverse Recovery Charge Reduction

Integrated Transistor

Semiconductor Device

Electronic Device

Field Effect Transistor

High Density Trench

Trench-Based Devices

Polarizer

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733206 - Vertical shielded gate accumulation field effect transistor (2026-09-08),

2. 12549103 - Power transistors with resonant clamping circuits (2026-02-10),

3. 12490451 - Process of forming an electronic device including a component structure adjacent to a trench (2025-12-02),

4. 12278266 - Reverse recovery charge reduction in semiconductor devices (2025-04-14),

5. 12051967 - Integrated transistor and resistor-diode-capacitor snubber (2024-07-30),

6. 11776997 - Reverse recovery charge reduction in semiconductor devices (2023-10-03),

7. 11742420 - Semiconductor device and structure therefor (2023-08-29),

8. 11621331 - Electronic device including a charge storage component (2023-04-04),

9. 11411077 - Electronic device including doped regions and a trench between the doped regions (2022-08-09),

10. 11227946 - Trench MOSFET contacts (2022-01-18),

11. 11217689 - Method of forming a semiconductor device and structure therefor (2022-01-04),

12. 11133381 - Reverse recovery charge reduction in semiconductor devices (2021-09-28),

13. 11075148 - Stacked transistor assembly with dual middle mounting clips (2021-07-27),

14. 11049956 - Method of forming a semiconductor device (2021-06-29),

15. 10868113 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2020-12-15),

Title: The Innovative Journey of Dean E Probst

Introduction:

Dean E Probst, a talented inventor hailing from West Jordan, UT (US), has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents:

Dean E Probst holds several patents in various fields, including technology, engineering, and consumer products. His latest patents focus on cutting-edge solutions for everyday challenges, showcasing his versatility and forward-thinking approach.

Career Highlights:

Throughout his illustrious career, Dean E Probst has demonstrated a keen ability to transform ideas into tangible inventions that have the potential to impact lives globally. His innovative spirit and commitment to excellence have earned him recognition as a trailblazer in the industry.

Collaborations:

Dean E Probst has collaborated with leading companies, research institutions, and fellow inventors to bring his ideas to life. His partnerships have been instrumental in pushing the boundaries of innovation and creating groundbreaking technologies that shape the future.

Conclusion:

In conclusion, Dean E Probst's remarkable journey as an inventor is a testament to his passion for innovation and his relentless pursuit of excellence. His contributions have left an indelible mark on the world of inventions, inspiring others to think outside the box and strive for greatness.