The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Jun. 13, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Dean E. Probst, West Jordan, UT (US);

Joseph Andrew Yedinak, Mountain Top, PA (US);

Balaji Padmanabhan, Chandler, AZ (US);

Peter A Burke, Portland, OR (US);

Jeffery A. Neuls, Beaverton, OR (US);

Ashok Challa, Milpitas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/34 (2007.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H02M 1/34 (2013.01); H01L 27/0727 (2013.01);
Abstract

In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.


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