The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Aug. 20, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Dean E. Probst, West Jordan, UT (US);

Jeffery A. Neuls, Beaverton, OR (US);

Masaichi Eda, Gresham, OR (US);

Peter A. Burke, Portland, OR (US);

Peter McGrath, Portland, OR (US);

Prasad Venkatraman, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/4236 (2013.01);
Abstract

In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches the material of the portion of the material between the trenches. Source and gate contact openings are formed together.


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