The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Sep. 18, 2023
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Shengling Deng, Chandler, AZ (US);
Dean E. Probst, West Jordan, UT (US);
Zia Hossain, Tempe, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include forming at least one dielectric region in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.