The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Mar. 02, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Balaji Padmanabhan, Chandler, AZ (US);

Zia Hossain, Tempe, AZ (US);

Dean E. Probst, West Jordan, UT (US);

Peter A. Burke, Portland, OR (US);

Sauvik Chowdhury, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0297 (2025.01); H10D 64/01 (2025.01); H10D 64/117 (2025.01);
Abstract

A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and Qmay be achieved, leading to lower switching losses.


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