The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 27, 2021
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Shengling Deng, Chandler, AZ (US);

Dean E. Probst, West Jordan, UT (US);

Zia Hossain, Tempe, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/868 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/6634 (2013.01); H01L 29/66348 (2013.01); H01L 29/66712 (2013.01); H01L 29/7397 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01); H01L 29/868 (2013.01);
Abstract

In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.


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