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For the Inventor, By the Inventor

Dresden, Germany

Andreas Ott

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 65(Granted Patents)


Company Filing History:

goldMedal9 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal3 out of 12,867 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2011-2016

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12 patents (USPTO):
1. 9305878 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects (2016-04-05),
2. 8932911 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects (2015-01-13),
3. 8828888 - Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer (2014-09-09),
4. 8748302 - Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level (2014-06-10),
5. 8728896 - Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching (2014-05-20),
6. 8703551 - Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatter (2014-04-22),
7. 8673087 - Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device (2014-03-18),
8. 8338306 - Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors (2012-12-25),
9. 8236654 - Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities (2012-08-07),
10. 8071442 - Transistor with embedded Si/Ge material having reduced offset to the channel region (2011-12-06),
11. 8048792 - Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material (2011-11-01),
12. 8021942 - Method of forming CMOS device having gate insulation layers of different type and thickness (2011-09-20),

Title: The Innovative Contributions of Andreas Ott

Introduction

Andreas Ott is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of integrated circuits, holding a total of 12 patents. His work focuses on enhancing the fabrication methods of integrated circuits, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents involves integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects. In this exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via that is electrically connected to the metal contact structure through the capping layer. Another patent describes a method for fabricating integrated circuits that includes forming a metal contact structure that is electrically connected to a device. A capping layer is selectively formed on the metal contact structure, followed by the deposition of an interlayer dielectric material over the capping layer. A metal hard mask is then deposited and patterned over the interlayer dielectric material to define an exposed region. The method etches this exposed region to expose at least a portion of the capping layer, and the metal hard mask is removed with an etchant while the capping layer physically separates the metal contact structure from the etchant. Finally, a metal is deposited to form a conductive via that is electrically connected to the metal contact structure through the capping layer.

Career Highlights

Throughout his career, Andreas Ott has worked with notable companies such as Globalfoundries Inc. and Advanced Micro Devices Corporation. His experience in these leading technology firms has allowed him to refine his skills and contribute to groundbreaking advancements in integrated circuit technology.

Collaborations

Andreas has collaborated with several talented individuals in his field, including Stephan Kronholz and Andy C Wei. These collaborations have further enriched his work and have led to innovative solutions in integrated circuit design and fabrication.

Conclusion

Andreas Ott's contributions to the field of integrated circuits are noteworthy and impactful. His innovative patents and collaborations with industry leaders highlight his dedication to advancing technology. His work continues to influence the development of modern electronic devices.

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