1. Globalfoundries Inc. (9 from 5,671 patents)

2. Advanced Micro Devices Corporation (3 from 12,909 patents)

1. 9305878 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects

2. 8932911 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects

3. 8828888 - Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer

4. 8748302 - Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level

5. 8728896 - Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching

6. 8703551 - Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatter

7. 8673087 - Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device

8. 8338306 - Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors

9. 8236654 - Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities

10. 8071442 - Transistor with embedded Si/Ge material having reduced offset to the channel region

11. 8048792 - Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material

12. 8021942 - Method of forming CMOS device having gate insulation layers of different type and thickness