The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Sep. 21, 2010
Jens Heinrich, Wachau, DE;
Ralf Richter, Dresden, DE;
Katja Steffen, Dresden, DE;
Johannes Groschopf, Radebeul, DE;
Frank Seliger, Dresden, DE;
Andreas Ott, Dresden, DE;
Manfred Heinz, Dresden, DE;
Andy Wei, Dresden, DE;
Jens Heinrich, Wachau, DE;
Ralf Richter, Dresden, DE;
Katja Steffen, Dresden, DE;
Johannes Groschopf, Radebeul, DE;
Frank Seliger, Dresden, DE;
Andreas Ott, Dresden, DE;
Manfred Heinz, Dresden, DE;
Andy Wei, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.