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Jens Heinrich

This inventor holds 30 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2011-2015.

USPTO Granted Patents = 30 (Patent Applications = 4)

% Patents Active = 53.3

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 50(Granted Patents)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2011-2015

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Areas of Expertise:

Semiconductor Fuses

Metal Gates

High-k Metal Gate

Through-Contacts

Transistor Density

Ultra Low-K

Metallization Layers

Silicide Leakage

Integrated Circuits

Dielectric Layers

Conductive Structures

Replacement Gate Approach

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9153684 - Semiconductor fuses in a semiconductor device comprising metal gates (2015-10-06),

2. 9034744 - Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material (2015-05-19),

3. 8951907 - Semiconductor devices having through-contacts and related fabrication methods (2015-02-10),

4. 8941182 - Buried sublevel metallizations for improved transistor density (2015-01-27),

5. 8922023 - Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials (2014-12-30),

6. 8877597 - Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation (2014-11-04),

7. 8786088 - Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction (2014-07-22),

8. 8778795 - Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier material (2014-07-15),

9. 8772154 - Integrated circuits including barrier polish stop layers and methods for the manufacture thereof (2014-07-08),

10. 8716079 - Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material (2014-05-06),

11. 8685807 - Method of forming metal gates and metal contacts in a common fill process (2014-04-01),

12. 8673770 - Methods of forming conductive structures in dielectric layers on an integrated circuit device (2014-03-18),

13. 8673696 - SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage (2014-03-18),

14. 8658509 - Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates (2014-02-25),

15. 8536052 - Semiconductor device comprising contact elements with silicided sidewall regions (2013-09-17),

Title: Jens Heinrich: A Pioneer in Semiconductor Innovations

Introduction

Jens Heinrich, a prominent inventor based in Wachau, Germany, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 30 patents, Heinrich is at the forefront of innovative techniques that enhance the efficiency and performance of semiconductor devices.

Latest Patents

His latest patents showcase cutting-edge advancements in semiconductor fuses and replacement gate approaches. The first patent focuses on "Semiconductor fuses in a semiconductor device comprising metal gates," which leverages a replacement gate strategy to efficiently remove the semiconductor material of the gate electrode structures during a wet chemical etch process. This innovation allows for the preservation of semiconductor material in electronic fuses, promoting the use of established semiconductor-based electronic fuses over more complex metal-based fuse structures. Additionally, the etch selectivity of the semiconductor material can be modified using ion implantation or electron bombardment.

Another notable patent involves the "Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material." This method bypasses the introduction of non-uniformities commonly associated with complex polishing processes by utilizing an etch process based on sacrificial mask material.

Career Highlights

Throughout his career, Jens Heinrich has been associated with major technology firms, including GlobalFoundries Inc. and Advanced Micro Devices Corporation (AMD). His work at these companies has significantly influenced the development of state-of-the-art semiconductor technologies and production techniques.

Collaborations

Heinrich has collaborated with talented professionals in the field, including Ralf Richter and Kai Frohberg. Together, they have contributed to groundbreaking advancements and continue to push the boundaries of semiconductor technology.

Conclusion

Jens Heinrich stands out as a leading inventor whose innovations are shaping the future of semiconductor devices. With his ongoing research and development efforts, he is sure to inspire future advancements in the industry. His extensive patent portfolio reflects his dedication to enhancing semiconductor technology and demonstrates his pivotal role in this vital sector.

Profile summary based on public USPTO records.

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