The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jun. 17, 2011
Applicants:

Egon Ronny Pfützner, Dresden, DE;

Carsten Peters, Dresden, DE;

Jens Heinrich, Wachau, DE;

Inventors:

Egon Ronny Pfützner, Dresden, DE;

Carsten Peters, Dresden, DE;

Jens Heinrich, Wachau, DE;

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of a method for fabricating integrated circuits are provided, as are embodiments of an integrated circuit. In one embodiment, the method includes the steps of depositing an interlayer dielectric ('ILD') layer over a semiconductor device, depositing a barrier polish stop layer over the ILD layer, and patterning at least the barrier polish stop layer and the ILD layer to create a plurality of etch features therein. Copper is plated over the barrier polish stop layer and into the plurality of etch features to produce a copper overburden overlying the barrier polish stop layer and a plurality of conductive interconnect features in the ILD layer and barrier polish stop layer. The integrated circuit is polished to remove the copper overburden and expose the barrier polish stop layer.


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