Dresden, Germany

Egon Ronny Pfützner

This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Inc.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Egon Ronny Pfützner. Retrieved from https://idiyas.com/inventor/egon-ronny-pfützner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Egon Ronny Pfützner

Introduction

Egon Ronny Pfützner is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of integrated circuits, showcasing his expertise through his innovative patent.

Latest Patents

Pfützner holds a patent for "Integrated circuits including barrier polish stop layers and methods for the manufacture thereof." This patent outlines a method for fabricating integrated circuits, which includes depositing an interlayer dielectric (ILD) layer over a semiconductor device, followed by the deposition of a barrier polish stop layer. The process involves patterning these layers to create etch features, plating copper over the barrier polish stop layer, and polishing the integrated circuit to remove excess copper.

Career Highlights

Egon Ronny Pfützner has established a successful career in the semiconductor industry. He is currently associated with Globalfoundries Inc., where he continues to innovate and contribute to advancements in integrated circuit technology.

Collaborations

Throughout his career, Pfützner has worked alongside talented colleagues, including Carsten Peters and Jens Heinrich. Their collaborative efforts have further enhanced the development of cutting-edge technologies in their field.

Conclusion

Egon Ronny Pfützner's contributions to integrated circuit technology exemplify his innovative spirit and dedication to advancing the semiconductor industry. His patent reflects a significant step forward in manufacturing processes, showcasing his role as a key inventor in this domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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