The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Aug. 12, 2011
Applicants:
Jens Heinrich, Wachau, DE;
Frank Feustel, Dresden, DE;
Kai Frohberg, Niederau, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823807 (2013.01); H01L 21/823871 (2013.01); H01L 21/823814 (2013.01); H01L 29/66636 (2013.01); H01L 29/0847 (2013.01); H01L 21/26586 (2013.01); H01L 21/28518 (2013.01); H01L 29/1083 (2013.01);
Abstract
When forming metal silicide regions, such as nickel silicide regions, in sophisticated transistors requiring a shallow drain and source dopant profile, superior controllability may be achieved by incorporating a silicide stop layer. To this end, in some illustrative embodiments, a carbon species may be incorporated on the basis of an implantation process in order to significantly modify the metal diffusion during the silicidation process. Consequently, an increased thickness of the metal silicide may be provided, while not unduly increasing the probability of creating contact failures.