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For the Inventor, By the Inventor

Dresden, Germany

Frank Feustel

USPTO Granted Patents = 53 

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 282(Granted Patents)

Forward Citations (Not Self Cited) = 282(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal32 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal21 out of 12,883 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2007-2018

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Areas of Expertise:
3-D Integrated Semiconductor Devices
Metallization Systems
Ultra Low-K (ULK) Materials
Dielectric Breakdown
Copper Defects Reduction
Hybrid Metallization Layers
Leakage Detection Materials
Stress Migration Tests
Nano Imprint Techniques
Electromigration Performance
Chemical Mechanical Polishing
Field Effect Transistors
53 patents (USPTO):Explore Patents
1. 10014279 - Methods of forming 3-D integrated semiconductor devices having intermediate heat spreading capabilities (2018-07-03),
2. 9627317 - Wafer with improved plating current distribution (2017-04-18),
3. 9455232 - Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure (2016-09-27),
4. 9349641 - Wafer with improved plating current distribution (2016-05-24),
5. 9318468 - 3-D integrated semiconductor device comprising intermediate heat spreading capabilities (2016-04-19),
6. 9245860 - Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom (2016-01-26),
7. 8877597 - Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation (2014-11-04),
8. 8859398 - Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge (2014-10-14),
9. 8835303 - Metallization system of a semiconductor device comprising extra-tapered transition vias (2014-09-16),
10. 8828887 - Restricted stress regions formed in the contact level of a semiconductor device (2014-09-09),
11. 8786088 - Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction (2014-07-22),
12. 8735237 - Method for increasing penetration depth of drain and source implantation species for a given gate height (2014-05-27),
13. 8716126 - Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions (2014-05-06),
14. 8698312 - Semiconductor device including a hybrid metallization layer stack for enhanced mechanical strength during and after packaging (2014-04-15),
15. 8673087 - Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device (2014-03-18),

Title: The Inventor Frank Feustel

Introduction: Frank Feustel is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Frank Feustel holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Frank Feustel has worked with leading research institutions and technology companies, consistently pushing the boundaries of what is possible in the world of inventions.

Collaborations: Throughout his career, Frank Feustel has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence that has led to numerous successful projects and inventions.

Conclusion: Frank Feustel's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in the global technology landscape.

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