The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Jun. 15, 2012
Applicants:

Uwe Griebenow, Markkleeberg, DE;

Kai Frohberg, Niederau, DE;

Frank Feustel, Dresden, DE;

Thomas Werner, Friedewald, DE;

Inventors:

Uwe Griebenow, Markkleeberg, DE;

Kai Frohberg, Niederau, DE;

Frank Feustel, Dresden, DE;

Thomas Werner, Friedewald, DE;

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions.


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