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Kai Frohberg

This inventor holds 90 USPTO granted patents and 17 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L21-823807). Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2007-2017.

USPTO Granted Patents = 90 (Patent Applications = 17)

% Patents Active = 60.0

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.3

ph-index = 8

Forward Citations = 1,100(Granted Patents)

Forward Citations (Not Self Cited) = 1,086(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Meissen, DE (2007 - 2014)
Niederau, DE (2008 - 2017)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2007-2017

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Areas of Expertise:

Semiconductor Devices

Metallization Systems

Contact Structures

Stress Engineering

High-K Gate Electrode

Dual Metal Hard Mask

Conductive Contacts

Ultra Low-K

Transistor Density

Silicided Sidewall Regions

Optical Communication

Replacement Gate Electrode

90 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9761689 - Method of forming a semiconductor device and according semiconductor device (2017-09-12),

2. 9590056 - Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers (2017-03-07),

3. 9269809 - Methods for forming protection layers on sidewalls of contact etch stop layers (2016-02-23),

4. 9245860 - Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom (2016-01-26),

5. 9196684 - Tensile nitride profile shaper etch to provide void free gapfill (2015-11-24),

6. 9159661 - Integrated circuits with close electrical contacts and methods for fabricating the same (2015-10-13),

7. 9153684 - Semiconductor fuses in a semiconductor device comprising metal gates (2015-10-06),

8. 9006114 - Method for selectively removing a spacer in a dual stress liner approach (2015-04-14),

9. 8941182 - Buried sublevel metallizations for improved transistor density (2015-01-27),

10. 8883582 - High-K gate electrode structure formed after transistor fabrication by using a spacer (2014-11-11),

11. 8877597 - Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation (2014-11-04),

12. 8859418 - Methods of forming conductive structures using a dual metal hard mask technique (2014-10-14),

13. 8859398 - Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge (2014-10-14),

14. 8835303 - Metallization system of a semiconductor device comprising extra-tapered transition vias (2014-09-16),

15. 8828887 - Restricted stress regions formed in the contact level of a semiconductor device (2014-09-09),

As an assistant on idiyas.com, it is my pleasure to provide you with an article focused on inventor Kai Frohberg, highlighting her remarkable contributions and innovations in the field of technology.

Title: Kai Frohberg: Pioneering Innovations in Semiconductor Devices

Introduction: Kai Frohberg, a visionary inventor hailing from Niederau, DE, is a trailblazer in the world of inventions. With a passion for innovation matched only by her technical expertise and collaborative spirit, she continues to inspire the next generation of inventors and shape the future of technology.

Latest Patents: Kai Frohberg's latest patents include a "Method of forming a semiconductor device" and "Semiconductor device comprising contact structures with protection layers." These inventions showcase her ingenuity in optimizing semiconductor devices for enhanced performance and reliability.

Career Highlights: Throughout her illustrious career, Kai Frohberg has amassed an impressive portfolio of 90 patents, solidifying her reputation as a leading innovator in the industry. She has made significant contributions during her tenure at renowned companies such as Globalfoundries Inc. and Advanced Micro Devices Corporation (AMD).

Collaborations: Kai Frohberg's collaborative nature is evident in her partnerships with esteemed colleagues such as Thomas Werner and Frank Feustel. Together, they have worked on groundbreaking projects that have pushed the boundaries of technology and set new standards in the field of semiconductor devices.

Conclusion: In conclusion, Kai Frohberg's relentless pursuit of innovation, coupled with her technical acumen and collaborative approach, has cemented her legacy as a trailblazer in the world of inventions. Her work continues to inspire and shape the future of technology, paving the way for advancements that will benefit society for years to come.

Profile summary based on public USPTO records.

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