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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9590056 B1

PDFFull Text
Date of Patent:
Mar. 07, 2017

Filed:

Dec. 14, 2015

Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kai Frohberg, Niederau, DE;

Marco Lepper, Dresden, DE;

Katrin Reiche, Goltzscha, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4175 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 23/53247 (2013.01); H01L 23/53266 (2013.01); H01L 29/7833 (2013.01); H01L 23/53238 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.

Find Patent Forward Citations

Quick Actions:

Frohberg, Kai. (2017). Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers (U.S. Patent No. 9590056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9590056

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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