The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 14, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4175 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 23/53247 (2013.01); H01L 23/53266 (2013.01); H01L 29/7833 (2013.01); H01L 23/53238 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.