The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jan. 02, 2013
Applicants:
Jens Heinrich, Wachau, DE;
Ralf Richter, Dresden, DE;
Kai Frohberg, Niederau, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/8238 (2006.01); H01L 23/525 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/26506 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 23/5256 (2013.01); H01L 29/66545 (2013.01); H01L 29/7843 (2013.01); H01L 2924/3011 (2013.01);
Abstract
In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.