The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Apr. 16, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Kai Frohberg, Niederau, DE;
Peter Moll, Dresden, DE;
Dominik Olligs, Dresden-Langebrueck, DE;
Heike Scholz, Hirschfeld, DE;
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/823807 (2013.01); H01L 21/823878 (2013.01);
Abstract
A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.